Effect of annealing temperature on the optical, structural and electrical properties of Zinc oxide films Nanoparticales deposited by pulsed laser deposition
Were prepared nanoparticles of zinc oxide (Zno) using the pulsed laser deposition (PLD) technology. The sedimentation of the membrane occurred during the interaction between the incident laser beams with the atoms of the target material, than a plasma state was formed inside the sedimentation chamber upward towards the bases of deposited installed higher than the disk (target), with distance of 20 mm, and a vacuum pressure of (10-3) mbar. The films are deposited and grow on the surface of the quartz base so that the distance between the target material and the laser beams is 150 mm, and with different annealing temperatures (550,750,950) C ˚and with a time of two hours on the quartz slides. The effect of changing the annealing temperatures was studied on the structural, surface topography, optical and electrical properties using UV,SIM,AFM,XRD measuring devices for the purpose of knowing the nature of the surface of the surface of the prepared film and observing the change in particle size with increasing annealing temperature after deposition. It was found that the average partial size is 42.16mm, and the preferential orientation along the surface along the surface is (200), and the energy gap decreases with increasing annealing temperature to become (3.15)ev at annealing temperature 950 C˚. And that the absorbance increase with increasing annealing temperature, The results of scanning electron microscopy shows that the particle size increases with the increase in the annealing temperature that the structures are all nanoparticle. The hall effect phenomenon for the samples from kind of (n-type) and the conductivity, hall coefficient and electrical mobility with the increase in the annealing temperature.
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